3 Stück IRFP260N IRFP260 N-Kanal Power HEX MOS-FET 200V 50A 300W TO-247

3 Stück IRFP260N N-Kanal Leistungs-MOS-FET
Mit niedrigem RDS(on) von 0,04-Ohm

ABSOLUTE MAXIMALWERTE

VDSS Drain-Source Voltage = 200 V
VGS Gate-Source Voltage = ± 20 V

ID Drain Current = 50A

td (on) 17 ns
td (off) 17 ns

PD Total Dissipation at Tc £ 25 oC = 300 W
Tstg Storage Temperature -55 to 175°C
Tj Max. Operating Junction Temperature 175°C

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Lieferumfang: 3 Stück IRFP260N N-Kanal Leistungs-MOS-FET 300W 200V 50A TO247-Gehäuse

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