3 Stück IRF5210 P-Channel Power MOS-FET -100V -40A 200W TO-220

3 Stück IRF5210 P-Kanal Leistungs-MOS-FET
Mit niedrigem RDS(on) von 0,06-Ohm

ABSOLUTE MAXIMALWERTE

VDSS Drain-Source Voltage = -100 V
VGS Gate-Source Voltage = ± 20 V

ID Drain Current = -40A

PD Total Dissipation at Tc £ 25 oC = 200 W
Tstg Storage Temperature -55 to 175°C
Tj Max. Operating Junction Temperature 175°C

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Lieferumfang: 3 Stück IRF5210  P-Kanal Leistungs-MOS-FET 200W TO220-Gehäuse

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